Image pickup device and electronic apparatus

ABSTRACT

The present disclosure relates to an image pickup device that inhibits color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section; an upper electrode section that is one of electrodes disposed facing each other, the upper electrode section being formed on a light incident side first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other, the lower electrode section being formed on an opposite side of the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.

TECHNICAL FIELD

The present disclosure relates to image pickup devices and electronicapparatuses, and more particularly to an image pickup device including anormal pixel for obtaining an image signal and an image plane phasedifference detection pixel for obtaining a phase difference signal forimage plane phase difference automatic focusing (AF), and electronicapparatuses.

BACKGROUND ART

Conventionally, there has been proposed an image pickup device includinga normal pixel and an image plane phase difference detection pixel, inwhich an organic photoelectric conversion film is provided in additionto a photodiode (PD) as photoelectric conversion sections of the imagepickup device (for example, see Patent Document 1).

The image pickup device has a configuration in which, as majorconstituent elements, an on-chip lens, a transparent upper electrode, anorganic photoelectric conversion film, a transparent lower electrode,and a PD are formed in order from a light-incident side. In particular,the lower electrode of the organic photoelectric conversion film of theimage plane phase difference detection pixel is provided with a slit atan optical center of the on-chip lens where intensity of incident lightis highest.

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2013-145292

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

Since the lower electrode of the organic photoelectric conversion filmis provided with a slit as described above in the image pickup devicedescribed in Patent Document 1, a lot of light passes through the slitof the lower electrode without being photoelectrically converted by theorganic photoelectric conversion film and is photoelectrically convertedby the PD into color mixture.

In addition, even in a case where a configuration in which the PD isomitted from the image pickup device is assumed, the incident lightleaks from the slit to the lower layer side, which can generate noise.

The present disclosure has been made in view of such circumstances, andis intended to keep generation of noise resulting from leakage ofincident light within a pixel under control.

Solutions to Problems

An image pickup device that is a first aspect of the present disclosureincludes an image plane phase difference detection pixel for obtaining aphase difference signal for image plane phase difference AF, and theimage plane phase difference detection pixel includes: a firstphotoelectric conversion section that generates an electric charge inresponse to incident light; an upper electrode section that is one ofelectrodes disposed facing each other across the first photoelectricconversion section, the upper electrode section being formed on anincident side of the incident light on the first photoelectricconversion section; and a lower electrode section that is another of theelectrodes disposed facing each other across the first photoelectricconversion section, the lower electrode section being formed on anopposite side of the incident side of the incident light on the firstphotoelectric conversion section, the lower electrode section beingmultiple-divided at a position that avoids a center of the incidentlight.

The lower electrode section can include a first lower electrode sectionand a second lower electrode section that are unevenly two-divided atthe position that avoids the center of the incident light.

The upper electrode section can include a member that transmits light,and the lower electrode section can include a member that reflectslight.

An output of one of the first and the second lower electrode sectionscan be used as the phase difference signal for image plane phasedifference AF.

Outputs of the first and the second lower electrode sections can beadded to be used as an image signal.

The image pickup device that is the first aspect of the presentdisclosure can further include a normal pixel for obtaining an imagesignal.

The image plane phase difference detection pixel can further include alight concentrating section that concentrates the incident light on thefirst photoelectric conversion section, and the lower electrode sectioncan be unevenly two-divided at a position that avoids an optical centerof the light concentrating section.

The image plane phase difference detection pixel can further include acolor filter that is colored on a pixel-by-pixel basis, the color filtercausing only a specified wavelength component of the incident light topass through the color filter and to enter the first photoelectricconversion section.

The first photoelectric conversion section can generate an electriccharge in response to only a specified wavelength component of theincident light.

The lower electrode section can include a member that transmits theincident light, and the image plane phase difference detection pixel canfurther include a second photoelectric conversion section that generatesan electric charge in response to light that passes through the firstphotoelectric conversion section and the lower electrode section.

At least one of the first and the second photoelectric conversionsections can be an organic photoelectric conversion film.

An electronic apparatus that is a second aspect of the presentdisclosure is equipped with an image pickup device including an imageplane phase difference detection pixel for obtaining a phase differencesignal for image plane phase difference AF, and the image plane phasedifference detection pixel includes: a first photoelectric conversionsection that generates an electric charge in response to incident light;an upper electrode section that is one of electrodes disposed facingeach other across the first photoelectric conversion section, the upperelectrode section being formed on an incident side of the incident lighton the first photoelectric conversion section; and a lower electrodesection that is another of the electrodes disposed facing each otheracross the first photoelectric conversion section, the lower electrodesection being formed on an opposite side of the incident side of theincident light on the first photoelectric conversion section, the lowerelectrode section being multiple-divided at a position that avoids acenter of the incident light.

An image pickup device that is a third aspect of the present disclosureincludes an image plane phase difference detection pixel for obtaining aphase difference signal for image plane phase difference AF, and theimage plane phase difference detection pixel includes: a firstphotoelectric conversion section that generates an electric charge to beused as an image signal in response to incident light; an upperelectrode section that is one of electrodes disposed facing each otheracross the first photoelectric conversion section, the upper electrodesection being formed on an incident side of the incident light on thefirst photoelectric conversion section; a lower electrode section thatis another of the electrodes disposed facing each other across the firstphotoelectric conversion section, the lower electrode section beingformed on an opposite side of the incident side of the incident light onthe first photoelectric conversion section; a second photoelectricconversion section that generates an electric charge to be used as thephase detection signal in response to light that passes through thefirst photoelectric conversion section and the lower electrode section;and a light-shielding section formed between the lower electrode sectionand the second photoelectric conversion section to cover a center of thelight that passes through the first photoelectric conversion section andthe lower electrode section.

The light-shielding section can include a member that reflects light.

An electronic apparatus that is a fourth aspect of the presentdisclosure is equipped with an image pickup device including an imageplane phase difference detection pixel for obtaining a phase differencesignal for image plane phase difference AF, and the image plane phasedifference detection pixel includes: a first photoelectric conversionsection that generates an electric charge to be used as an image signalin response to incident light; an upper electrode section that is one ofelectrodes disposed facing each other across the first photoelectricconversion section, the upper electrode section being formed on anincident side of the incident light on the first photoelectricconversion section; a lower electrode section that is another of theelectrodes disposed facing each other across the first photoelectricconversion section, the lower electrode section being formed on anopposite side of the incident side of the incident light on the firstphotoelectric conversion section; a second photoelectric conversionsection that generates an electric charge to be used as the phasedetection signal in response to light that passes through the firstphotoelectric conversion section and the lower electrode section; and alight-shielding section formed between the lower electrode section andthe second photoelectric conversion section to cover a center of thelight that passes through the first photoelectric conversion section andthe lower electrode section.

Effects of the Invention

According to the first to fourth aspects of the present disclosure,occurrence of color mixture or noise can be inhibited.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view illustrating a first configurationexample of an image pickup device to which the present disclosure isapplied.

FIG. 2 is a cross-sectional view illustrating a second configurationexample of the image pickup device to which the present disclosure isapplied.

FIG. 3 is a cross-sectional view illustrating a third configurationexample of the image pickup device to which the present disclosure isapplied.

FIG. 4 is a cross-sectional view illustrating a fourth configurationexample of the image pickup device to which the present disclosure isapplied.

FIG. 5 is a cross-sectional view illustrating a fifth configurationexample of the image pickup device to which the present disclosure isapplied.

FIG. 6 is a cross-sectional view illustrating a sixth configurationexample of the image pickup device to which the present disclosure isapplied.

FIG. 7 is a cross-sectional view illustrating a seventh configurationexample of the image pickup device to which the present disclosure isapplied.

FIG. 8 is a diagram illustrating an exemplary use of electronicapparatuses to which the present disclosure is applied.

MODE FOR CARRYING OUT THE INVENTION

The best form for carrying out the present disclosure (hereinafterreferred to as embodiment) will be described in detail below withreference to the drawings.

<First Configuration Example of Image Pickup Device to which the PresentDisclosure is Applied>

FIG. 1 is a cross-sectional view illustrating a first configurationexample of an image pickup device to which the present disclosure isapplied.

The image pickup device 10 includes normal pixels 11 and image planephase difference detection pixels 12, and has a configuration in which,as major constituent elements, an on-chip lens (OCL) 13, a color filter(CF) 14, an upper electrode 15, an organic photoelectric conversion film16, and a lower electrode 17 are formed in order from a light-incidentside. Furthermore, on a lower layer side of the lower electrode 17,various pixel transistors, floating diffusion (FD), and the like areformed (reference numerals are omitted).

The on-chip lens 13 is formed in each pixel, and concentrates incidentlight onto the organic photoelectric conversion film 16. Note that as alight concentrating section that concentrates incident light, aconstituent element other than the on-chip lens 13 may be used. Thecolor filter 14 has a color of red (R) or blue (B) in the normal pixel11. Meanwhile, the color filter 14 has a color of green (G) in the imageplane phase difference detection pixel 12. For example, a Bayer array isapplicable to arrangement of R, G, and B. In addition, for example, aClearVid array may be applied to arrangement of R, G, and B. In thatcase, since the image plane phase difference detection pixels 12 withthe color G of the color filter 14 are adjacent to each other, a phasedifference signal with a short distance between the image plane phasedifference detection pixels 12 can be obtained. However, the color ofthe color filter 14 of the image plane phase difference detection pixel12 is not limited to G, and may be R or B.

The upper electrode 15 is formed of a transparent material thattransmits the incident light concentrated by the on-chip lens 13. Theorganic photoelectric conversion film 16 responds to light ofwavelengths of R, G, and B, and generates an electric charge accordingto light quantity of the incident light.

The lower electrode 17 is made of a metal material or the like thatreflects light. The lower electrode 17 reflects light that passesthrough the organic photoelectric conversion film 16 and thereby makesan optical path of the incident light longer, which can enhanceefficiency of photoelectric conversion in the organic photoelectricconversion film 16. In addition, this can decrease thickness of theorganic photoelectric conversion film 16.

Note that in each normal pixel 11, the lower electrode 17 is formedwithout division of an area of one pixel. On the other hand, in theimage plane phase difference detection pixel 12, an area of one pixel isunevenly divided by a slit that is so provided as to avoid an opticalcenter of the on-chip lens 13. Accordingly, the lower electrode 17 isformed at a position where intensity of the incident light is highest,which can inhibit the incident light from leaking to layers lower thanthe lower electrode 17. Therefore, this can inhibit occurrence of noiseor color mixture.

In this diagram, the lower electrode 17 of the image plane phasedifference detection pixel 12 includes a longer lower electrode 17-1 anda shorter lower electrode 17-2. However, the number of divisions of thelower electrode 17 of the image plane phase difference detection pixel12 is not limited to two.

The longer lower electrode 17-1 can obtain a pixel output with highersensitivity than the shorter lower electrode 17-2. On the other hand,the shorter lower electrode 17-2 can obtain a pixel output with a betterseparation ratio than the longer lower electrode 17-1. Therefore, usingthe pixel output of one of the lower electrodes 17-1 and 17-2 allowsimplementation of high-precision image plane phase difference AF.

In both of the normal pixel 11 and the image plane phase differencedetection pixel 12 of the image pickup device 10, the incident lightconcentrated by the on-chip lens 13 enters the organic photoelectricconversion film 16 through the color filter 14 and the upper electrode15, and is then converted into an electric charge. The convertedelectric charge is output to a downstream stage (FD or the like) throughthe lower electrode 17.

In the downstream stage, the output from the normal pixel 11 is used asan image signal. From the image plane phase difference detection pixel12, a plurality of outputs is obtained from the lower electrodes 17-1and 17-2, and one of these outputs is used as a phase difference signalfor image plane phase difference AF. Adding the plurality of outputsfrom the image plane phase difference detection pixel 12 provides anoutput equivalent to the output from the normal pixel 11.

Note that the on-chip lens 13 may be omitted from constituent elementsof the image pickup device 10 illustrated in FIG. 1. In that case, aneffect of inhibiting occurrence of noise or color mixture cannot beexpected, but a pixel output with high sensitivity and a pixel outputwith a good separation ratio can be obtained. Using one of the pixeloutputs allows implementation of high-precision image plane phasedifference AF.

<Second Configuration Example of Image Pickup Device to which thePresent Disclosure is Applied>

FIG. 2 is a cross-sectional view illustrating a second configurationexample of the image pickup device to which the present disclosure isapplied.

The image pickup device 20 is not provided with normal pixels. Thestructure of the image plane phase difference detection pixel 12 in theimage pickup device 10 illustrated in FIG. 1 is employed in all thepixels (except for color of color filters). Note that, of constituentelements of the image pickup device 20, the already mentionedconstituent elements common to the image pickup device 10 are denotedwith the same reference numerals, and thus descriptions thereof will beomitted as appropriate. This similarly applies to the configurationexamples described below.

That is, in the image pickup device 20, all the pixels are the imageplane phase difference detection pixels 12, and either one of R, G and Bis employed as color of the color filter 14. Note that, for example, aBayer array is applicable to arrangement of R, G, and B. In addition,the lower electrode 17 is multiple-divided in every pixel of the imagepickup device 20.

In every pixel of the image pickup device 20, incident lightconcentrated by the on-chip lens 13 enters the organic photoelectricconversion film 16 through the color filter 14 and the upper electrode15, and is then converted into an electric charge. The convertedelectric charge is output to a downstream stage (FD or the like) throughthe lower electrode 17.

In the downstream stage, an image signal can be obtained by adding aplurality of outputs in each pixel (outputs of the lower electrodes 17-1and 17-2). In addition, an arbitrary pixel out of all the pixels can beselected and the plurality of outputs of the pixel can be used as phasedifference signals for image plane phase difference AF.

Note that the on-chip lens 13 may be omitted from constituent elementsof the image pickup device 20 illustrated in FIG. 2. In that case, aneffect of inhibiting occurrence of noise or color mixture cannot beexpected, but a pixel output with high sensitivity and a pixel outputwith a good separation ratio can be obtained. Using one of the pixeloutputs allows implementation of high-precision image plane phasedifference AF.

<Third Configuration Example of Image Pickup Device to which the PresentDisclosure is Applied>

FIG. 3 is a cross-sectional view illustrating a third configurationexample of the image pickup device to which the present disclosure isapplied.

The image pickup device 30 includes normal pixels 31 and image planephase difference detection pixels 32, and has a configuration in which,as major constituent elements, the on-chip lens 13, the upper electrode15, a specified wavelength limited organic photoelectric conversion film33, and the lower electrode 17 are formed in order from a light-incidentside. Furthermore, on a lower layer side of the lower electrode 17,various pixel transistors, FD, and the like are formed (referencenumerals are omitted).

The specified wavelength limited organic photoelectric conversion film33 responds only to light of a wavelength of either one of R, G, and B,and generates an electric charge according to quantity of the light.That is, the specified wavelength limited organic photoelectricconversion film 33 of the left-end normal pixel 31 in the diagramresponds only to light of a wavelength of R. The specified wavelengthlimited organic photoelectric conversion film 33 of the central imageplane phase difference detection pixel 32 in the diagram responds onlyto light of a wavelength of G. The specified wavelength limited organicphotoelectric conversion film 33 of the right-end normal pixel 31 in thediagram responds only to light of a wavelength of R.

In both of the normal pixel 31 and the image plane phase differencedetection pixel 32 of the image pickup device 30, incident lightconcentrated by the on-chip lens 13 enters the specified wavelengthlimited organic photoelectric conversion film 16 through the upperelectrode 15, and is then converted into an electric charge. Theconverted electric charge is output to a downstream stage (FD or thelike) through the lower electrode 17.

In the downstream stage, the pixel output from the normal pixel 31 isused as an image signal. From the image plane phase difference detectionpixel 32, a plurality of outputs is obtained from the lower electrodes17-1 and 17-2, and one of these outputs is used as a phase differencesignal for image plane phase difference AF. Adding the plurality ofoutputs from the image plane phase difference detection pixel 32provides a pixel output equivalent to the pixel output from the normalpixel 31.

Note that the on-chip lens 13 may be omitted from constituent elementsof the image pickup device 30 illustrated in FIG. 3. In that case, aneffect of inhibiting occurrence of noise or color mixture cannot beexpected, but a pixel output with high sensitivity and a pixel outputwith a good separation ratio can be obtained. Using one of the pixeloutputs allows implementation of high-precision image plane phasedifference AF.

<Fourth Configuration Example of Image Pickup Device to which thePresent Disclosure is Applied>

FIG. 4 is a cross-sectional view illustrating a fourth configurationexample of the image pickup device to which the present disclosure isapplied.

The image pickup device 40 includes normal pixels 41 and image planephase difference detection pixels 42. Two photoelectric conversionsections (a specified wavelength limited organic photoelectricconversion film 43 and a PD 46) are formed in each pixel. The imagepickup device 40 has a configuration in which, as major constituentelements, the on-chip lens 13, the upper electrode 15, the specifiedwavelength limited organic photoelectric conversion film 43, a lowerelectrode 44, a color filter (CF) 45, and the PD 46 are formed in orderfrom a light-incident side.

The specified wavelength limited organic photoelectric conversion film43 responds only to light of a wavelength of G, and generates anelectric charge according to quantity of the light.

The lower electrode 44 is formed of a transparent member that transmitslight, and outputs the electric charge converted by the specifiedwavelength limited organic photoelectric conversion film 43 to adownstream stage. In addition, in the normal pixel 41, the lowerelectrode 44 is formed without division of an area of one pixel, in asimilar manner to the lower electrode 17 or the like of the image pickupdevice 10 or the like.

On the other hand, in the image plane phase difference detection pixel42, an area of one pixel of the lower electrode 44 is unevenly dividedby a slit that is so provided as to avoid the optical center of theon-chip lens 13. Accordingly, in the image plane phase differencedetection pixels 42, the longer lower electrode 44-1 can obtain a pixeloutput with higher sensitivity than the shorter lower electrode 44-2. Onthe other hand, the shorter lower electrode 44-2 can obtain a pixeloutput with a better separation ratio than the longer lower electrode44-1. Therefore, using the pixel output of one of the lower electrodes44-1 and 44-2 allows implementation of high-precision image plane phasedifference AF.

The color filter 45 has color of R or B in the normal pixel 41, andcolor of white (W) in the image plane phase difference detection pixel42. Note that color arrangement of the color filter 45 is not limited tothe above-described example.

In the first and third normal pixels 41 from the left end in thediagram, the PD 46 generates an electric charge in response to light ofR or B that has passed through the specified wavelength limited organicphotoelectric conversion film 43 and the color filter 44 of R or B. Inthe second and fourth image plane phase difference detection pixels 42from the left end in the diagram, the PD 46 generates an electric chargein response to light of magenta (Mg) that has passed through thespecified wavelength limited organic photoelectric conversion film 43and the color filter 44 of W. Note that a photoelectric conversion filmmay be disposed instead of the PD 46.

In both the normal pixels 41 and the image plane phase differencedetection pixels 42 of the image pickup device 40, incident lightconcentrated by the on-chip lens 13 enters the specified wavelengthlimited organic photoelectric conversion film 43 through the upperelectrode 15, and a G component of the incident light is converted intoan electric charge. Furthermore, light other than the G component thathas passed through the specified wavelength limited organicphotoelectric conversion film 43 enters the PD 46 through the lowerelectrode 44 and the color filter 45, and is converted into an electriccharge.

The electric charge generated by the specified wavelength limitedorganic photoelectric conversion film 43 of the normal pixels 41 isoutput to a downstream stage through the lower electrode 44, and is usedas a G component of an image signal. In addition, the electric chargegenerated by the PD 46 of the normal pixel 41 is output to a downstreamstage through an electrode (not illustrated), and is used as an R or Bcomponent of an image signal.

Meanwhile, the electric charge generated by the specified wavelengthlimited organic photoelectric conversion film 43 of the image planephase difference detection pixels 42 is output to a downstream stagefrom the lower electrodes 44-1 and 44-2, and the output from one of thelower electrodes 44-1 and 44-2 is used as a phase difference signal forimage plane phase difference AF. Note that addition of the outputs fromthe lower electrodes 44-1 and 44-2 can be used as a pixel signal of theG component equivalent to the normal pixel 41. In addition, the electriccharge generated by the PD 46 of the image plane phase differencedetection pixels 42 is output to a downstream stage through an electrode(not illustrated), and is used as an Mg component of an image signal.

Note that the on-chip lens 13 may be omitted from constituent elementsof the image pickup device 40 illustrated in FIG. 4. In that case, aneffect of inhibiting occurrence of noise or color mixture cannot beexpected, but a pixel output with high sensitivity and a pixel outputwith a good separation ratio can be obtained. Using one of the pixeloutputs allows implementation of high-precision image plane phasedifference AF.

<Fifth Configuration Example of Image Pickup Device to which the PresentDisclosure is Applied>

FIG. 5 is a cross-sectional view illustrating a fifth configurationexample of the image pickup device to which the present disclosure isapplied.

The image pickup device 50 includes normal pixels 51 and image planephase difference detection pixels 52. Two photoelectric conversionsections (the specified wavelength limited organic photoelectricconversion film 43 and the PD 46) are formed in each pixel. The imagepickup device 50 has a configuration in which, as major constituentelements, the on-chip lens 13, a color filter 53, the upper electrode15, the specified wavelength limited organic photoelectric conversionfilm 43, a lower electrode 54, and the PD 46 are formed in order from alight-incident side. Furthermore, in the image plane phase differencedetection pixel 52, a light-shielding film 55 is formed between thelower electrode 54 and the PD 46.

The color filter 53 has color of yellow (Ye) or cyan (Cy) in the normalpixel 51, and color of white (W) in the image plane phase differencedetection pixel 52. Note that color arrangement of the color filter 45is not limited to the above-described example.

The specified wavelength limited organic photoelectric conversion film43 responds only to light of a wavelength of G, and generates anelectric charge according to quantity of the light.

The lower electrode 54 is formed of a transparent member that transmitslight. The lower electrode 54 is formed without division of an area ofone pixel in both the normal pixels 51 and the image plane phasedifference detection pixels 52.

The light-shielding film 55 provided only in the image plane phasedifference detection pixel 52 is made of a member that reflects light,such as metal, and is formed to cover the optical center of the on-chiplens 13. Note that adjustment of a horizontal length of thelight-shielding film 55 allows adjustment of sensitivity of thespecified wavelength limited organic photoelectric conversion film 43 tolight of a wavelength of G, and adjustment of light quantity enteringthe PD 46 that generates an electric charge serving as a basis for aphase difference signal.

In the first and third normal pixels 51 from the left end in thediagram, the PD 46 generates an electric charge in response to light ofR or B that has passed through the color filter 53 of Ye or Cy and thespecified wavelength limited organic photoelectric conversion film 43.In the second and fourth image plane phase difference detection pixels52 from the left end in the diagram, the PD 46 generates an electriccharge in response to light of Mg that has passed through the colorfilter 44 of W and the specified wavelength limited organicphotoelectric conversion film 43.

In both the normal pixels 51 and the image plane phase differencedetection pixels 52 of the image pickup device 50, incident lightconcentrated by the on-chip lens 13 enters the specified wavelengthlimited organic photoelectric conversion film 43 through the colorfilter 53 and the upper electrode 15, and a G component of the incidentlight is converted into an electric charge. Furthermore, light that haspassed through the specified wavelength limited organic photoelectricconversion film 43 enters the PD 46 through the lower electrode 54, andis then converted into an electric charge. However, in the image planephase difference detection pixel 52, incidence of light into the PD 46is limited by the light-shielding film 55.

The electric charge generated by the specified wavelength limitedorganic photoelectric conversion film 43 of the normal pixels 51 and theimage plane phase difference detection pixels 52 is output to adownstream stage through the lower electrode 54, and is used as a Gcomponent of an image signal. In addition, the electric charge generatedby the PD 46 of the normal pixel 51 is output to a downstream stagethrough an electrode (not illustrated), and is used as an R or Bcomponent of an image signal.

Meanwhile, the electric charge generated by the PD 46 of the image planephase difference detection pixel 52 in response to light of a wavelengthof Mg is output to a downstream stage through an electrode (notillustrated). One of them is used as a phase difference signal for imageplane phase difference AF.

<Sixth Configuration Example of Image Pickup Device to which the PresentDisclosure is Applied>

FIG. 6 is a cross-sectional view illustrating a sixth configurationexample of the image pickup device to which the present disclosure isapplied.

The image pickup device 60 includes normal pixels 61 and the image planephase difference detection pixels 62. Two photoelectric conversionsections (the specified wavelength limited organic photoelectricconversion film 43 and a PD 64) are formed in each pixel. The imagepickup device 60 has a configuration in which, as major constituentelements, the on-chip lens 13, the upper electrode 15, the specifiedwavelength limited organic photoelectric conversion film 43, the lowerelectrode 54, a color filter 63, and the PD 64 are formed in order froma light-incident side. Furthermore, in the image plane phase differencedetection pixel 62, the light-shielding film 55 is formed between thelower electrode 54 and the color filter 63.

The color filter 63 has color of R or B. In this diagram, the colorfilter 63 has color of B in the normal pixel 61, and color of R in theimage plane phase difference detection pixel 62. Note that colorarrangement of the color filter 45 is not limited to the above-describedexample.

In the first and third image plane phase difference detection pixels 62from the left end in the diagram, the PD 64 generates an electric chargein response to light of a wavelength of R that has passed through thespecified wavelength limited organic photoelectric conversion film 43and the color filter 63 of R. In the second and fourth normal pixels 61from the left end in the diagram, the PD 64 generates an electric chargein response to light of a wavelength of B that has passed through thespecified wavelength limited organic photoelectric conversion film 43and the color filter 63 of B.

In both the normal pixel 61 and the image plane phase differencedetection pixel 62 of the image pickup device 60, incident lightconcentrated by the on-chip lens 13 enters the specified wavelengthlimited organic photoelectric conversion film 43 through the upperelectrode 15, and a G component of the light is converted into anelectric charge. Furthermore, light that has passed through thespecified wavelength limited organic photoelectric conversion film 43enters the PD 64 through the lower electrode 54 and the color filter 63,and is then converted into an electric charge. However, in the imageplane phase difference detection pixel 62, incidence of light into thePD 64 is limited by the light-shielding film 55.

The electric charge generated by the specified wavelength limitedorganic photoelectric conversion film 43 of the normal pixel 61 and theimage plane phase difference detection pixel 62 is output to adownstream stage through the lower electrode 54, and is used as a Gcomponent of an image signal. In addition, the electric charge generatedby the PD 64 of the normal pixel 61 is output to a downstream stagethrough an electrode (not illustrated), and is used as an R component ofan image signal.

Meanwhile, the electric charge generated by the PD 64 of the image planephase difference detection pixel 62 is output to a downstream stagethrough an electrode (not illustrated), and is used as a phasedifference signal for image plane phase difference AF.

<Variation of Image Pickup Device to which the Present Disclosure isApplied>

FIG. 7 is a variation of the image pickup device 10 illustrated inFIG. 1. That is, the variation illustrates a configuration example of animage sensor in which a sensor section 71 corresponding to the imagepickup device 10 of FIG. 1, a logic section 72 including an analogdigital converter (A/D converter) and the like, and a memory section 73are stacked. The image sensor enables high-speed operation response byframe memory correlated double. sampling (CDS). In addition, using thelogic section 72 and the memory section 73 for image plane phasedifference AF enables high-speed AF.

Note that as the stacked image sensor as illustrated in FIG. 7, not onlythe image pickup device 10 but also the above-described image pickupdevices 20 to 60 can also be employed.

<Exemplary Use of Image Pickup Device>

FIG. 8 is a diagram illustrating an exemplary use of electronicapparatuses that use the above-described image pickup devices 10 to 60.

The above-described image pickup devices 10 to 60 can be used, forexample, in various cases of sensing light, such as visible light,infrared light, ultraviolet light, and X-ray, as follows.

Apparatus that captures images to be provided for use of appreciation,such as a digital camera and a portable device with a camera function.

Apparatus to be provided for use of traffic for driving safety includingautomatic stop, recognition of driver's condition, and the like, such asa vehicle-mounted sensor that captures images of front, back,surroundings, and inside of an automobile, a surveillance camera thatmonitors traveling vehicles and roads, and a distance measuring sensorthat measures a distance between vehicles.

Apparatus to be provided for home electric appliances, such as a TV, arefrigerator, and an air conditioner, for capturing user's gesture andoperating the appliance in response to the gesture.

Apparatus to be provided for use of medical services and health care,such as an endoscope and an apparatus that captures images of a bloodvessel by receiving infrared light.

Apparatus to be provided for use of security, such as a surveillancecamera for crime prevention applications and a camera for personauthentication applications.

Apparatus to be provided for use of beauty, such as a skin measuringdevice that captures skin images and a microscope that captures scalpimages.

Apparatus to be provided for use of sport, such as an action camera anda wearable camera for sporting applications and the like.

Apparatus to be provided for use of agriculture, such as a camera formonitoring a state of fields and farm products.

Note that the embodiment of the present disclosure is not limited to theabove-described embodiment, and various changes can be made withoutdeparting from the spirit of the present disclosure.

The present disclosure may also have the following configurations.

(1)

An image pickup device including an image plane phase differencedetection pixel for obtaining a phase difference signal for image planephase difference AF, the image plane phase difference detection pixelincluding:

a first photoelectric conversion section that generates an electriccharge in response to incident light;

an upper electrode section that is one of electrodes disposed facingeach other across the first photoelectric conversion section, the upperelectrode section being formed on an incident side of the incident lighton the first photoelectric conversion section; and

a lower electrode section that is another of the electrodes disposedfacing each other across the first photoelectric conversion section, thelower electrode section being formed on an opposite side of the incidentside of the incident light on the first photoelectric conversionsection, the lower electrode section being multiple-divided at aposition that avoids a center of the incident light.

(2)

The image pickup device according to (1) described above, wherein thelower electrode section includes a first lower electrode section and asecond lower electrode section that are unevenly two-divided at theposition that avoids the center of the incident light.

(3)

The image pickup device according to (1) or (2) described above, wherein

the upper electrode section includes a member that transmits light, and

the lower electrode section includes a member that reflects light.

(4)

The image pickup device according to (2) described above, wherein anoutput of one of the first and the second lower electrode sections isused as the phase difference signal for image plane phase difference AF.

(5)

The image pickup device according to (2) described above, whereinoutputs of the first and the second lower electrode sections are addedto be used as an image signal.

(6)

The image pickup device any one of (1) to (5) described above, furtherincluding a normal pixel for obtaining an image signal.

(7)

The image pickup device according to any one of (1) to (6) describedabove, wherein

the image plane phase difference detection pixel further includes alight concentrating section that concentrates the incident light on thefirst photoelectric conversion section, and

the lower electrode section is unevenly two-divided at a position thatavoids an optical center of the light concentrating section.

(8)

The image pickup device according to any one of (1) to (7) describedabove, wherein the image plane phase difference detection pixel furtherincludes a color filter that is colored on a pixel-by-pixel basis, thecolor filter causing only a specified wavelength component of theincident light to pass through the color filter and to enter the firstphotoelectric conversion section.

(9)

The image pickup device according to any one of (1) to (8) describedabove, wherein the first photoelectric conversion section generates anelectric charge in response to only a specified wavelength component ofthe incident light.

(10)

The image pickup device according to any one of (1), (2), and (4) to (9)described above, wherein

the lower electrode section includes a member that transmits theincident light, and

the image plane phase difference detection pixel further includes asecond photoelectric conversion section that generates an electriccharge in response to light that passes through the first photoelectricconversion section and the lower electrode section.

(11)

The image pickup device according to (10) described above, wherein atleast one of the first and the second photoelectric conversion sectionsis an organic photoelectric conversion film.

(12)

An electronic apparatus equipped with an image pickup device includingan image plane phase difference detection pixel for obtaining a phasedifference signal for image plane phase difference AF, the image planephase difference detection pixel including:

a first photoelectric conversion section that generates an electriccharge in response to incident light;

an upper electrode section that is one of electrodes disposed facingeach other across the first photoelectric conversion section, the upperelectrode section being formed on an incident side of the incident lighton the first photoelectric conversion section; and

a lower electrode section that is another of the electrodes disposedfacing each other across the first photoelectric conversion section, thelower electrode section being formed on an opposite side of the incidentside of the incident light on the first photoelectric conversionsection, the lower electrode section being multiple-divided at aposition that avoids a center of the incident light.

(13)

An image pickup device including an image plane phase differencedetection pixel for obtaining a phase difference signal for image planephase difference AF, the image plane phase difference detection pixelincluding:

a first photoelectric conversion section that generates an electriccharge to be used as an image signal in response to incident light;

an upper electrode section that is one of electrodes disposed facingeach other across the first photoelectric conversion section, the upperelectrode section being formed on an incident side of the incident lighton the first photoelectric conversion section;

a lower electrode section that is another of the electrodes disposedfacing each other across the first photoelectric conversion section, thelower electrode section being formed on an opposite side of the incidentside of the incident light on the first photoelectric conversionsection;

a second photoelectric conversion section that generates an electriccharge to be used as the phase detection signal in response to lightthat passes through the first photoelectric conversion section and thelower electrode section; and

a light-shielding section formed between the lower electrode section andthe second photoelectric conversion section to cover a center of thelight that passes through the first photoelectric conversion section andthe lower electrode section.

(14)

The image pickup device according to (13) described above, wherein thelight-shielding section includes a member that reflects light.

(15)

An electronic apparatus equipped with an image pickup device includingan image plane phase difference detection pixel for obtaining a phasedifference signal for image plane phase difference AF, the image planephase difference detection pixel including:

a first photoelectric conversion section that generates an electriccharge to be used as an image signal in response to incident light;

an upper electrode section that is one of electrodes disposed facingeach other across the first photoelectric conversion section, the upperelectrode section being formed on an incident side of the incident lighton the first photoelectric conversion section;

a lower electrode section that is another of the electrodes disposedfacing each other across the first photoelectric conversion section, thelower electrode section being formed on an opposite side of the incidentside of the incident light on the first photoelectric conversionsection;

a second photoelectric conversion section that generates an electriccharge to be used as the phase detection signal in response to lightthat passes through the first photoelectric conversion section and thelower electrode section; and

a light-shielding section formed between the lower electrode section andthe second photoelectric conversion section to cover a center of thelight that passes through the first photoelectric conversion section andthe lower electrode section.

REFERENCE SIGNS LIST

-   -   10 Image pickup device    -   11 Normal pixel    -   12 Image plane phase difference detection pixel    -   13 On-chip lens    -   14 Color filter    -   15 Upper electrode    -   16 Organic photoelectric conversion film    -   17 Lower electrode    -   20 Image pickup device    -   30 Image pickup device    -   31 Normal pixel    -   32 Image plane phase difference detection pixel    -   33 Specified wavelength limited organic photoelectric conversion        film    -   40 Image pickup device    -   41 Normal pixel    -   42 Image plane phase difference detection pixel    -   43 Specified wavelength limited organic photoelectric conversion        film    -   44 Lower electrode    -   45 Color filter    -   46 PD    -   50 Image pickup device    -   51 Normal pixel    -   52 Image plane phase difference detection pixel    -   53 Color filter    -   54 Lower electrode    -   55 Light-shielding film    -   60 Image pickup device    -   61 Normal pixel    -   62 Image plane phase difference detection pixel    -   64 Color filter    -   64 PD    -   71 Sensor section    -   72 Logic section    -   73 Memory section

1. An image pickup device comprising an image plane phase differencedetection pixel for obtaining a phase difference signal for image planephase difference AF, the image plane phase difference detection pixelcomprising: a first photoelectric conversion section that generates anelectric charge in response to incident light; an upper electrodesection that is one of electrodes disposed facing each other across thefirst photoelectric conversion section, the upper electrode sectionbeing formed on an incident side of the incident light on the firstphotoelectric conversion section; and a lower electrode section that isanother of the electrodes disposed facing each other across the firstphotoelectric conversion section, the lower electrode section beingformed on an opposite side of the incident side of the incident light onthe first photoelectric conversion section, the lower electrode sectionbeing multiple-divided at a position that avoids a center of theincident light.
 2. The image pickup device according to claim 1, whereinthe lower electrode section includes a first lower electrode section anda second lower electrode section that are unevenly two-divided at theposition that avoids the center of the incident light.
 3. The imagepickup device according to claim 2, wherein the upper electrode sectionincludes a member that transmits light, and the lower electrode sectionincludes a member that reflects light.
 4. The image pickup deviceaccording to claim 2, wherein an output of one of the first and thesecond lower electrode sections is used as the phase difference signalfor image plane phase difference AF.
 5. The image pickup deviceaccording to claim 2, wherein outputs of the first and the second lowerelectrode sections are added to be used as an image signal.
 6. The imagepickup device according to claim 2, further comprising a normal pixelfor obtaining an image signal.
 7. The image pickup device according toclaim 2, wherein the image plane phase difference detection pixelfurther comprises a light concentrating section that concentrates theincident light on the first photoelectric conversion section, and thelower electrode section is unevenly two-divided at a position thatavoids an optical center of the light concentrating section.
 8. Theimage pickup device according to claim 2, wherein the image plane phasedifference detection pixel further comprises a color filter that iscolored on a pixel-by-pixel basis, the color filter causing only aspecified wavelength component of the incident light to pass through thecolor filter and to enter the first photoelectric conversion section. 9.The image pickup device according to claim 2, wherein the firstphotoelectric conversion section generates an electric charge inresponse to only a specified wavelength component of the incident light.10. The image pickup device according to claim 2, wherein the lowerelectrode section includes a member that transmits the incident light,and the image plane phase difference detection pixel further comprises asecond photoelectric conversion section that generates an electriccharge in response to light that passes through the first photoelectricconversion section and the lower electrode section.
 11. The image pickupdevice according to claim 10, wherein at least one of the first and thesecond photoelectric conversion sections is an organic photoelectricconversion film.
 12. An electronic apparatus equipped with an imagepickup device comprising an image plane phase difference detection pixelfor obtaining a phase difference signal for image plane phase differenceAF, the image plane phase difference detection pixel comprising: a firstphotoelectric conversion section that generates an electric charge inresponse to incident light; an upper electrode section that is one ofelectrodes disposed facing each other across the first photoelectricconversion section, the upper electrode section being formed on anincident side of the incident light on the first photoelectricconversion section; and a lower electrode section that is another of theelectrodes disposed facing each other across the first photoelectricconversion section, the lower electrode section being formed on anopposite side of the incident side of the incident light on the firstphotoelectric conversion section, the lower electrode section beingmultiple-divided at a position that avoids a center of the incidentlight.
 13. An image pickup device comprising an image plane phasedifference detection pixel for obtaining a phase difference signal forimage plane phase difference AF, the image plane phase differencedetection pixel comprising: a first photoelectric conversion sectionthat generates an electric charge to be used as an image signal inresponse to incident light; an upper electrode section that is one ofelectrodes disposed facing each other across the first photoelectricconversion section, the upper electrode section being formed on anincident side of the incident light on the first photoelectricconversion section; a lower electrode section that is another of theelectrodes disposed facing each other across the first photoelectricconversion section, the lower electrode section being formed on anopposite side of the incident side of the incident light on the firstphotoelectric conversion section; a second photoelectric conversionsection that generates an electric charge to be used as the phasedetection signal in response to light that passes through the firstphotoelectric conversion section and the lower electrode section; and alight-shielding section formed between the lower electrode section andthe second photoelectric conversion section to cover a center of thelight that passes through the first photoelectric conversion section andthe lower electrode section.
 14. The image pickup device according toclaim 13, wherein the light-shielding section includes a member thatreflects light.
 15. An electronic apparatus equipped with an imagepickup device comprising an image plane phase difference detection pixelfor obtaining a phase difference signal for image plane phase differenceAF, the image plane phase difference detection pixel comprising: a firstphotoelectric conversion section that generates an electric charge to beused as an image signal in response to incident light; an upperelectrode section that is one of electrodes disposed facing each otheracross the first photoelectric conversion section, the upper electrodesection being formed on an incident side of the incident light on thefirst photoelectric conversion section; a lower electrode section thatis another of the electrodes disposed facing each other across the firstphotoelectric conversion section, the lower electrode section beingformed on an opposite side of the incident side of the incident light onthe first photoelectric conversion section; a second photoelectricconversion section that generates an electric charge to be used as thephase detection signal in response to light that passes through thefirst photoelectric conversion section and the lower electrode section;and a light-shielding section formed between the lower electrode sectionand the second photoelectric conversion section to cover a center of thelight that passes through the first photoelectric conversion section andthe lower electrode section.